? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 1.4 a i dm t c = 25 c, pulse width limited by t jm 3.0 a i a t c = 25 c 1.4 a e as t c = 25 c 150 mj dv/dt i s i dm , v dd v dss , t j 150c 10 v/ns p d t c = 25 c86 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-252 0.35 g to-263 2.50 g to-220 3.00 g polar tm power mosfets n-channel enhancement mode avalanche rated fast intrinsic rectifier IXTY1R4N120P ixta1r4n120p ixtp1r4n120p v dss = 1200v i d25 = 1.4a r ds(on) 13 ds99871b(06/12) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1200 v v gs(th) v ds = v gs , i d = 100 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 50 na i dss v ds = v dss , v gs = 0v 5 a t j = 125 c 300 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 10.5 13 to-263 aa (ixta) g s d (tab) to-252 (ixty) g s d (tab) g = gate d = drain s = source tab = drain g d s to-220ab (ixtp) d (tab) features international standard packages low q g avalanche rated low package inductance fast intrinsic rectifier advantages high power density easy to mount space savings applications dc-dc converters switch-mode and resonant-mode power supplies ac and dc motor drives discharge circiuts in lasers, spark igniters, rf generators high voltage pulse power applications
ixys reserves the right to change limits, test conditions, and dimensions. IXTY1R4N120P ixta1r4n120p ixtp1r4n120p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 0.8 1.3 s c iss 666 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 36 pf c rss 7.6 pf t d(on) 25 ns t r 27 ns t d(off) 78 ns t f 29 ns q g(on) 24.8 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 4.4 nc q gd 12.8 nc r thjc 1.45 c/w r thcs to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 1.4 a i sm repetitive, pulse width limited by t jm 4.2 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 900 ns notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. on through-hole package, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 25 (external) i f = 1.4a, v gs = 0v,-di/dt = 100a/ s v r = 100v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source to-220 outline to-252 aa outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 1. gate 2. drain 3. source 4. drain bottom side to-263 outline 1. gate 2. drain 3. source 4. drain bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005
? 2012 ixys corporation, all rights reserved IXTY1R4N120P ixta1r4n120p ixtp1r4n120p fig. 1. output characteristics @ t j = 25oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6v 6v fig. 2. output characteristics @ t j = 125oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30 35 40 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 3. r ds(on) normalized to i d = 0.7a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 1.4a i d = 0.7a fig. 4. r ds(on) normalized to i d = 0.7a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 0.5 1 1.5 2 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTY1R4N120P ixta1r4n120p ixtp1r4n120p fig. 7. transconductance 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 0.5 1 1.5 2 2.5 3 3.5 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 20 24 q g - nanocoulombs v gs - volts v ds = 600v i d = 0.7a i g = 10ma fig. 10. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: ixt_1r4n120p (2c) 4-01-08-a
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